ETS-8100-001 RF Power Amplifier, 200W, 80 MHz to 1 GHz, for IEC/EN 61000-4-3, 3 or 10 V/m
ETS-Lindgren's Model 8100-001 RF Power Amplifier is a 200W power amplifier, designed primarily for EMC applications that include IEC/EN 61000-4-3, 10 V/m requirements.
Key Features
- IEC/EN 61000-4-3, 3 or 10 V/m
- High Reliability
- Excellent Performance and Efficiency
- Safety Interlock
Physical Specifications
- Dimensions: 19 in, 3U Case, 630 mm (24.8 in) Deep
- Weight: 26.0 kg (57.3 lb)
- Case Style (Standard): Rack Mount with Rear Panel Connectors
- Case Style (Optional): Bench Mount with Front Panel Connectors
Electrical Specifications
- Electrical Frequency Range: 80 MHz to 1 GHz
- Nominal Output Power: 200W
- Gain Variation: 2 dB
- Harmonics: -20 dBc Maximum
- Output Impedance: 50
- Input VSWRB: 2:1 Maximum
- AC Supply: 100 to 250 VAC Single Phase
- Supply Frequency Range: 50/60 Hz
- Line Power: <900 VA
- Remote Interface: GPIB, LAN
- RF Connectors: Type N
Additional Documents:
ETS-Lindgren's Model 8100-001 RF Power Amplifier is a 200W power amplifier, designed primarily for EMC applications that include IEC/EN 61000-4-3, 10 V/m requirements.
Utilizing GaAs technology, this RF amplifier provides higher linearity, rugged design and better efficiency performance versus silicon-based amplifiers.
The 8100-001 provides very low distortion and tolerance for 100% mismatch.
It can deliver an output power of 200 W over the frequency range of 80 MHz to 400 MHz and an output power of 100 W over the frequency range of 400 MHz to 1000 MHz. The five-stage solid-state amplifier is of modular design and integrated into two RF modules, both featuring a high linearity and a flat frequency response. In order to achieve a stable output power, the bias of the amplifier stages are controlled by low-drift voltage regulators. The maximum input power for achieving the nominal output power is 0 dBm corresponding to 1 mW or 0.224 V into 50 ?. Due to its gain reserve, the amplifier usually achieves full output power with an input power of -5 dBm
ETS-Lindgren's Model 8100-001 RF Power Amplifier is a 200W power amplifier, designed primarily for EMC applications that include IEC/EN 61000-4-3, 10 V/m requirements.
Utilizing GaAs technology, this RF amplifier provides higher linearity, rugged design and better efficiency performance versus silicon-based amplifiers.
The 8100-001 provides very low distortion and tolerance for 100% mismatch.
It can deliver an output power of 200 W over the frequency range of 80 MHz to 400 MHz and an output power of 100 W over the frequency range of 400 MHz to 1000 MHz. The five-stage solid-state amplifier is of modular design and integrated into two RF modules, both featuring a high linearity and a flat frequency response. In order to achieve a stable output power, the bias of the amplifier stages are controlled by low-drift voltage regulators. The maximum input power for achieving the nominal output power is 0 dBm corresponding to 1 mW or 0.224 V into 50 ?. Due to its gain reserve, the amplifier usually achieves full output power with an input power of -5 dBm